Everspin's MR25H10CDF is a 1,048,576-bit magnetoresistive random access memory (MRAM) device consisting of 131,072 8-bit words. MR25H10 provides serial EEPROM and serial flash compatible read/write timing, no write delay, and unlimited read/write life.

Unlike other serial memories, both reads and writes can occur randomly in the memory, and there is no delay between two writes. For applications that must use a small number of I/O pins to quickly store and retrieve data and programs, the MR25H10 is an ideal memory solution.

MR25H10 is available in a 5mmx6mm 8-pin DFN package or a 5mmx6mm 8-pin DFN package with a small logo. Both are compatible with serial EEPROM, flash memory and FeRAM products. MR25H10CDF and MR25H10CDC in this series can be used to replace Cypress's model FM24V10. 

MR25H10CDF can provide highly reliable data storage in various temperature ranges. The product offers industrial (-40° to +85°C) and AEC-Q1001 grade (-40°C to +125°C) operating temperature range options.

For applications that must use the minimum number of pins to quickly store and retrieve data and programs, MR25H10 is the ideal mram chip. AEC-Q1001 qualified option is available. 40MHz read and write speed, with unlimited endurance. The data is non-volatile and is retained for 20 years. Data retention power down. RoHS-compliant software package.

1Mb serial SPI MRAM

No write delay

Unlimited writing endurance

Data retention for more than 20 years

Automatic data protection in case of power failure

Block write protection

Fast and simple SPI interface, clock rate up to 40MHz

2.7 to 3.6 volt power supply range

Low current sleep mode

Industrial temperature

Provide 8-pin DFN or 8-pin DFN RoHS-compliant small mark

Package

Directly replace serial EEPROM, flash memory, FeRAM

AEC-Q1001 level option