Traditional storage solutions often rely on supercapacitors or batteries to achieve power failure protection,which not only increases the complexity and cost of the system,but also may introduce reliability risks.Everspin's STT-MRAM device completely changed this situation.By using spin transfer torque technology,MRAM memory chip can automatically save data at the moment of power failure without any external auxiliary power supply.

MRAM memory chip adopts DDRx interface similar to JEDEC in design,but it is deeply optimized for spin transfer torque technology.Its high bandwidth capability(transmission rate per pin is as high as 1333 MT/s)combined with real byte addressing capability and extremely low latency makes MRAM memory chips still perform well under high memory workload.
 

As the latest high-capacity STT-MRAM device from Everspin,EMD4E001G is aimed at enterprises and computing applications that need higher capacity,lower latency and stronger durability.By optimizing I/O stream management,this 1Gb MRAM memory chip significantly improves the latency certainty,enabling storage OEMs to greatly improve the quality of service(QoS)of their products.Whether it is used as a persistent data buffer in solid state disk(SSD)or in storage accelerator,computing storage and other scenarios,EMD4E001G can play its unique advantages and help the system achieve more efficient data processing.
 

MRAM memory chip EMD4E001G adopts ST-DDR4 interface,supports 667MHz clock frequency,and the transmission rate per pin reaches 1333 MT/s,which is compatible with BGA package of JEDEC standard,making it easy to integrate into existing storage,computing and network applications.In terms of specific specifications,the equipment provides two organizational modes,namely,128Mb x8 and 64Mb x16.The page size is 1024bit(x8)and 2048bit(x16)respectively,and the working temperature ranges from 0℃to 85℃,which meets the requirements of most enterprise-level environments.
 

Everspin's ST-DDR4 interface not only supports most DDR4 functions,but also optimizes the characteristics of MRAM memory chips.MRAM's multi-purpose register reading and writing ability and per device addressability(PDA)make the system design more flexible.On-chip DLL(delay locked loop)ensures the precise synchronization of DQ and DQS signals with clock CK,thus maintaining data integrity in high-speed transmission.
 

As the agent of Everspin in China,Yingshangwei is committed to providing customers with the most advanced MRAM memory chip solutions to help enterprises meet the challenges of data persistence and system reliability.If you need anything,please feel free to call.