CY62177EV30LL-55BAXIT
Features
Thin small outline package (TSOP) I configurable as 2 M × 16
or as 4 M × 8 static RAM (SRAM)
Very high speed
55 ns
Wide voltage range
2.2 V to 3.7 V
Ultra low standby power
Typical standby current: 3μA
Maximum standby current: 25μA
Ultra low active power
Typical active current: 4.5 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE Features
Automatic power down when deselected
Complementary Metal Oxide Semiconductor (CMOS) for
optimum speed and  power
Available in Pb-free 48-pin TSOP I package and 48-ball FBGA
package